Characterization of Uniformity in Nb/Nb x Si 1-x /Nb Josephson Junctions.

Autor: Haygood IW; Department of Physics, University of Colorado, Boulder, CO 80309 USA., Edwards ERJ; IBM Research, Semiconductor and AI Hardware, Albany, NY 12203 USA., Fox AE; National Institute of Standards and Technology, Boulder, CO 80305 USA., Pufall MR; National Institute of Standards and Technology, Boulder, CO 80305 USA., Schneider ML; National Institute of Standards and Technology, Boulder, CO 80305 USA., Rippard WH; National Institute of Standards and Technology, Boulder, CO 80305 USA., Dresselhaus PD; National Institute of Standards and Technology, Boulder, CO 80305 USA., Benz SP; National Institute of Standards and Technology, Boulder, CO 80305 USA.
Jazyk: angličtina
Zdroj: IEEE transactions on applied superconductivity : a publication of the IEEE Superconductivity Committee [IEEE Trans Appl Supercond] 2019 Jun 12; Vol. 29.
DOI: 10.1109/TASC.2019.2922225
Abstrakt: The uniformity of the barriers in Josephson junctions (JJs) is a critical parameter in determining performance and operating margins for a wide variety of superconducting electronic circuits. We present an automated measurement system capable of measuring individual JJs across a 1 × 1 cm die at both ambient temperature and 4 K. This technique allows visualization of the spatial variation over a large area of the critical electrical properties of the junctions and allows for the direct correlation between room-temperature (RT) resistance and low temperature properties. The critical current variation of Nb x Si 1-x (x = 15%) barriers is found to be about 2.6% (one standard deviation) for 1024 junctions across an individual die and only weakly correlates with RT resistance measurements.
Databáze: MEDLINE