| Autor: |
El Bouanani L; Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States.; Department of Electrical Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States., Serna MI; Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd, Bldg 160, Austin, Texas 78758, United States., M N Hasan S; Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States., Murillo BL; Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States.; Department of Electrical Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States., Nam S; School of Advanced Materials Engineering, Kookmin University, 77, Jeongneungro, Seongbuk-gu, Seoul 136-702, Korea., Choi H; School of Advanced Materials Engineering, Kookmin University, 77, Jeongneungro, Seongbuk-gu, Seoul 136-702, Korea., Alshareef HN; Materials Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia., Quevedo-Lopez MA; Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States. |
| Abstrakt: |
Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenides (TMDs), have attracted immense interest due to their excellent electronic and optical properties. The combination of single and multilayered 2D TMDs coupled with either Si or II-VI semiconductors can result in robust and reliable photodetectors. In this paper, we report the deposition process of MoSe 2 -layered films using pulsed laser deposition (PLD) over areas of 20 cm 2 with a tunable band gap. Raman and X-ray diffraction indicates crystalline and highly oriented layered MoSe 2 . X-ray photoelectron spectroscopy shows Mo and Se present in the first few layers of the film. Rutherford backscattering demonstrates the effect of O and C on the surface and film/substrate interface of the deposited films. Ultraviolet-visible spectroscopy, Kelvin probe, photoelectron spectroscopy, and electrical measurements are used to investigate the band diagram and electrical property dependence as a function of MoSe 2 layers/thickness. As the MoSe 2 thickness increases from 3.5 to 11.4 nm, the band gap decreases from 1.98 to 1.75 eV, the work function increases from 4.52 to 4.72 eV, the ionization energy increases from 5.71 to 5.77 eV, the sheet resistance decreases from 541 to 56.0 kΩ, the contact resistance decreases from 187 to 54.6 Ω·cm 2 , and the transfer length increases from 2.27 to 61.9 nm. Transmission electron microscopy (TEM) cross-sectional images demonstrate the layered structure of the MoSe 2 with an average interlayer spacing of 0.68 nm. The fabricated MoSe 2 -Si photodiodes demonstrate a current on/off ratio of ∼2 × 10 4 orders of magnification and photocurrent generation with a 22.5 ns rise time and a 190.8 ns decay time, respectively. |
