Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.

Autor:	Abo Ghazala MS; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Othman HA; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Sharaf El-Deen LM; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Nawwar MA; Physics Department, Faculty of Science, Menoufia University, Shebin El-Kom, Menoufia 32511, Egypt., Kashyout AEB; Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, Alexandria 21934, Egypt.
Jazyk:	angličtina
Zdroj:	ACS omega [ACS Omega] 2020 Oct 16; Vol. 5 (42), pp. 27633-27644. Date of Electronic Publication: 2020 Oct 16 (Print Publication: 2020).
DOI:	10.1021/acsomega.0c04206
Abstrakt:	Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV-vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications. Competing Interests: The authors declare no competing financial interest. (© 2020 American Chemical Society.)
Databáze:	MEDLINE
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