| Autor: |
Carrillo-Nuñez H; School of Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom., Medina-Bailón C, Georgiev VP, Asenov A |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2020 Oct 15; Vol. 32 (2), pp. 020001. Date of Electronic Publication: 2020 Oct 15. |
| DOI: |
10.1088/1361-6528/abacf3 |
| Abstrakt: |
Fabrication techniques at the nanometer scale offer potential opportunities to access single-dopant features in nanoscale transistors. Here, we report full-band quantum transport simulations with hole-phonon interactions through a device consisting of two gates-all-around in series and a p-type Si nanowire channel with a single dopant within each gated region. For this purpose, we have developed and implemented a mode-space-based full-band quantum transport simulator with phonon scattering using the six-band k · p method. Based on the non-equilibrium Green's function formalism and self-consistent Born's approximation, an expression for the hole-phonon interaction self-energy within the mode-space representation is introduced. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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