Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires.

Autor: Yeo HS; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea., Lee K; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea., Sim YC; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea., Park SH; Department of Electronics Engineering, Catholic University of Daegu, Kyeongsan, 38430, Republic of Korea., Cho YH; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea. yhc@kaist.ac.kr.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2020 Sep 21; Vol. 10 (1), pp. 15371. Date of Electronic Publication: 2020 Sep 21.
DOI: 10.1038/s41598-020-71590-x
Abstrakt: Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.
Databáze: MEDLINE
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