Silicon dynistors with subnanosecond switching times.
| Autor: | Korotkov SV; Ioffe Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia., Aristov YV; Ioffe Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia., Korotkov DA; Ioffe Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia., Zhmodikov AL; Ioffe Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia. |
|---|---|
| Jazyk: | angličtina |
| Zdroj: | The Review of scientific instruments [Rev Sci Instrum] 2020 Aug 01; Vol. 91 (8), pp. 084704. |
| DOI: | 10.1063/5.0015284 |
| Abstrakt: | High-voltage silicon dynistors, which are turned on by means of initiating a shock ionization process in silicon, have unique capabilities with regard to switching of current pulses of a nanosecond duration. This paper describes the design of shock-ionized dynistors (SIDs) optimized to reduce the energy loss during switching. The use of these SIDs allows for a twofold reduction in the triggering generator's power consumption. The results of this study show that it is possible to effectively increase the power switched in the nanosecond range through the use of SIDs with a higher operating voltage as well as to effectively reduce the energy loss in the SIDs by increasing the areas of their semiconductor structures. Moreover, it is possible to create switches that are able to switch nanosecond pulses with a power of more than 10 MW based on SIDs connected in series. |
| Databáze: | MEDLINE |
| Externí odkaz: |
|