Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications.

Autor: Bundaleska N; Instituto de Plasmas E Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal., Dias A; Instituto de Plasmas E Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal., Bundaleski N; CEFITEC, Departamento de Física, Faculdade de Ciências E Tecnologia, Universidade Nova de Lisboa, 2829-516, Lisbon, Portugal., Felizardo E; Instituto de Plasmas E Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal., Henriques J; Instituto de Plasmas E Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal., Tsyganov D; Instituto de Plasmas E Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal., Abrashev M; Faculty of Physics, Sofia University, 1164, Sofia, Bulgaria., Valcheva E; Faculty of Physics, Sofia University, 1164, Sofia, Bulgaria., Kissovski J; Faculty of Physics, Sofia University, 1164, Sofia, Bulgaria., Ferraria AM; BSIRG, iBB, DEQ, Instituto Superior Técnico, Universidade de Lisboa, 1049-001, Lisbon, Portugal., do Rego AMB; BSIRG, iBB, DEQ, Instituto Superior Técnico, Universidade de Lisboa, 1049-001, Lisbon, Portugal., Almeida A; Centre of Physics and Engineering of Advanced Materiais, Instituto Superior Técnico, Universidade de Lisboa, 1049-001, Lisbon, Portugal., Zavašnik J; Department of Gaseous Electronics F6, Jozef Stefan Institute, 1000, Ljubljana, Slovenia., Cvelbar U; Department of Gaseous Electronics F6, Jozef Stefan Institute, 1000, Ljubljana, Slovenia., Teodoro OMND; CEFITEC, Departamento de Física, Faculdade de Ciências E Tecnologia, Universidade Nova de Lisboa, 2829-516, Lisbon, Portugal., Strunskus T; Institute for Materials Science, Christian Albrechts Universitaet Zu Kiel, Kiel, Germany., Tatarova E; Instituto de Plasmas E Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal. elena.stefanova@tecnico.ulisboa.pt.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2020 Aug 03; Vol. 10 (1), pp. 13013. Date of Electronic Publication: 2020 Aug 03.
DOI: 10.1038/s41598-020-69844-9
Abstrakt: The ability to change the secondary electron emission properties of nitrogen-doped graphene (N-graphene) has been demonstrated. To this end, a novel microwave plasma-enabled scalable route for continuous and controllable fabrication of free-standing N-graphene sheets was developed. High-quality N-graphene with prescribed structural qualities was produced at a rate of 0.5 mg/min by tailoring the high energy density plasma environment. Up to 8% of nitrogen doping levels were achieved while keeping the oxygen content at residual amounts (~ 1%). The synthesis is accomplished via a single step, at atmospheric conditions, using ethanol/methane and ammonia/methylamine as carbon and nitrogen precursors. The type and level of doping is affected by the position where the N-precursor is injected in the plasma environment and by the type of precursors used. Importantly, N atoms incorporated predominantly in pyridinic/pyrrolic functional groups alter the performance of the collective electronic oscillations, i.e. plasmons, of graphene. For the first time it has been demonstrated that the synergistic effect between the electronic structure changes and the reduction of graphene π-plasmons caused by N doping, along with the peculiar "crumpled" morphology, leads to sub-unitary (< 1) secondary electron yields. N-graphene can be considered as a prospective low secondary electron emission and plasmonic material.
Databáze: MEDLINE
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