Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection.

Autor:	Dascalescu I; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania.; Faculty of Physics, University of Bucharest, 405 Atomistilor Street, 077125 Magurele, Romania., Zoita NC; National Institute for Research and Development in Optoelectronics, 409 Atomistilor Street, 077125 Magurele, Romania., Slav A; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania., Matei E; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania., Iftimie S; Faculty of Physics, University of Bucharest, 405 Atomistilor Street, 077125 Magurele, Romania., Comanescu F; National Institute for Research and Development in Microtechnologies, 077190 Voluntari, Romania., Lepadatu AM; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania., Palade C; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania., Lazanu S; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania., Buca D; Peter Grünberg Institut 9 (PGI 9) and JARA Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52425 Jülich, Germany., Teodorescu VS; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania.; Academy of Romanian Scientists, Bucharest, 050094 Bucharest, Romania., Ciurea ML; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania.; Academy of Romanian Scientists, Bucharest, 050094 Bucharest, Romania., Braic M; National Institute for Research and Development in Optoelectronics, 409 Atomistilor Street, 077125 Magurele, Romania., Stoica T; National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania.
Jazyk:	angličtina
Zdroj:	ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Jul 29; Vol. 12 (30), pp. 33879-33886. Date of Electronic Publication: 2020 Jul 15.
DOI:	10.1021/acsami.0c06212
Abstrakt:	GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping and HRTEM investigations indicate higher crystalline quality of GeSn epitaxial layers deposited by Ge HiPI-MS compared to commonly used radio frequency magnetron sputtering (RF-MS). To obtain a rectifying heterostructure for SWIR light detection, a layer of GeSn nanocrystals (NCs) embedded in oxide was deposited on the epitaxial GeSn one. Embedded GeSn NCs are obtained by cosputtering deposition of (Ge 1- x Sn x ) 1- y (SiO 2 ) y layers and subsequent rapid thermal annealing at a low temperature of 400 °C. Intrinsic GeSn structural defects give p-type behavior, while the presence of oxygen leads to the n-character of the embedded GeSn NCs. Such an embedded NCs/epitaxial GeSn p-n heterostructure shows superior photoelectrical response up to 3 orders of magnitude increase in the 1.2-2.5 μm range, as compared to performances of diode based only on embedded NCs.
Databáze:	MEDLINE
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