| Autor: |
Yazdani N; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Andermatt S; Nano TCAD Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Yarema M; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Farto V; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Bani-Hashemian MH; Nano TCAD Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Volk S; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Lin WMM; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Yarema O; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Luisier M; Nano TCAD Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland., Wood V; Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092, Zurich, Switzerland. vwood@ethz.ch. |
| Abstrakt: |
The potential of semiconductors assembled from nanocrystals has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase change memory cells. Despite the commercial success of nanocrystal quantum dots as optical absorbers and emitters, applications involving charge transport through nanocrystal semiconductors have eluded exploitation due to the inability to predictively control their electronic properties. Here, we perform large-scale, ab initio simulations to understand carrier transport, generation, and trapping in strongly confined nanocrystal quantum dot-based semiconductors from first principles. We use these findings to build a predictive model for charge transport in these materials, which we validate experimentally. Our insights provide a path for systematic engineering of these semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems. |
