Ultralow Voltage Manipulation of Ferromagnetism.
| Autor: | Prasad B; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA., Huang YL; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA., Chopdekar RV; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Chen Z; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA., Steffes J; Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA., Das S; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA., Li Q; Department of Physics, University of California, Berkeley, CA, 94720, USA., Yang M; Department of Physics, University of California, Berkeley, CA, 94720, USA., Lin CC; Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Gosavi T; Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Nikonov DE; Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Qiu ZQ; Department of Physics, University of California, Berkeley, CA, 94720, USA., Martin LW; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA., Huey BD; Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA., Young I; Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA., Íñiguez J; Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch-sur-Alzette, L-4362, Luxemburg.; Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg., Manipatruni S; Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA.; Kepler Computing, Hillsboro, OR, 97124, USA., Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.; Department of Physics, University of California, Berkeley, CA, 94720, USA. |
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| Jazyk: | angličtina |
| Zdroj: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2020 Jul; Vol. 32 (28), pp. e2001943. Date of Electronic Publication: 2020 May 28. |
| DOI: | 10.1002/adma.202001943 |
| Abstrakt: | Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 µJ cm -2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO (© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.) |
| Databáze: | MEDLINE |
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