First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS_{2}.

Autor: Roch JG; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Miserev D; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Froehlicher G; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Leisgang N; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Sponfeldner L; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Watanabe K; National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Taniguchi T; National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Klinovaja J; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Loss D; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Warburton RJ; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
Jazyk: angličtina
Zdroj: Physical review letters [Phys Rev Lett] 2020 May 08; Vol. 124 (18), pp. 187602.
DOI: 10.1103/PhysRevLett.124.187602
Abstrakt: Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS_{2}. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.
Databáze: MEDLINE
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