| Autor: |
Safeer CK; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain., Ingla-Aynés J; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain., Ontoso N; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain., Herling F; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain., Yan W; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain.; School of Physics & Astronomy, The University of Nottingham, Nottingham NG7 2RD, U.K., Hueso LE; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain.; IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain., Casanova F; CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain.; IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain. |
| Abstrakt: |
Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration, or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition-metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate the spin Hall effect up to room temperature in graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect arises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications. |
