Nitroaromatics as n-type organic semiconductors for field effect transistors.

Autor:	Niazi MR; Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B1, Canada. dmitrii.perepichka@mcgill.ca., Hamzehpoor E; Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B1, Canada. dmitrii.perepichka@mcgill.ca., Ghamari P; Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B1, Canada. dmitrii.perepichka@mcgill.ca., Perepichka IF; Institute of Flexible Electronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China. i.perepichka@bangor.ac.uk., Perepichka DF; Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B1, Canada. dmitrii.perepichka@mcgill.ca.
Jazyk:	angličtina
Zdroj:	Chemical communications (Cambridge, England) [Chem Commun (Camb)] 2020 Jun 11; Vol. 56 (47), pp. 6432-6435.
DOI:	10.1039/d0cc01236j
Abstrakt:	The nitro group (NO2) is one of the most common electron-withdrawing groups but it has rarely been used in the design of organic semiconductors (OSCs). Herein, we report the n-type semiconducting behavior of simple fluorenone derivatives functionalized with NO2 and CN groups. While the electron mobilities measured in the thin film field-effect transistors are modest (10-6-10-4 cm2 V-1 s-1), the nitrofluorenone OSCs offer excellent air-stability and remarkable tunability of energy levels via facile modification of the substitution pattern. We study the effect of substituents on the electrochemical properties, molecular and crystal structure, and the charge transport properties of nitrofluorenones to revitalize the underestimated potential of NO2 functionalization in organic electronics.
Databáze:	MEDLINE
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