| Autor: |
Bolhuis M; Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands. s.conesaboj@tudelft.nl., Hernandez-Rueda J, van Heijst SE, Tinoco Rivas M, Kuipers L, Conesa-Boj S |
| Jazyk: |
angličtina |
| Zdroj: |
Nanoscale [Nanoscale] 2020 May 21; Vol. 12 (19), pp. 10491-10497. Date of Electronic Publication: 2020 May 07. |
| DOI: |
10.1039/d0nr00755b |
| Abstrakt: |
Transition metal dichalcogenides such as MoS 2 represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS 2 (v-MoS 2 ) nanosheets could be advantageous as compared to conventional horizontal MoS 2 (h-MoS 2 ) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS 2 limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS 2 nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS 2 nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
|
