Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides.

Autor: Taghinejad H; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Taghinejad M; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Eftekhar AA; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Li Z; Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States., West MP; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Javani MH; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.; Department of Physics, Kennesaw State University, Marietta, Georgia 30060, United States., Abdollahramezani S; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Zhang X; School of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States., Tian M; Institute of Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Johnson-Averette T; Institute of Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Ajayan PM; School of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States., Vogel EM; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Shi SF; Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States., Cai W; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Adibi A; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Jazyk: angličtina
Zdroj: ACS nano [ACS Nano] 2020 May 26; Vol. 14 (5), pp. 6323-6330. Date of Electronic Publication: 2020 May 08.
DOI: 10.1021/acsnano.0c02885
Abstrakt: Heterostructures of two-dimensional transition metal dichalcogenides (TMDs) can offer a plethora of opportunities in condensed matter physics, materials science, and device engineering. However, despite state-of-the-art demonstrations, most current methods lack enough degrees of freedom for the synthesis of heterostructures with engineerable properties. Here, we demonstrate that combining a postgrowth chalcogen-swapping procedure with the standard lithography enables the realization of lateral TMD heterostructures with controllable dimensions and spatial profiles in predefined locations on a substrate. Indeed, our protocol receives a monolithic TMD monolayer ( e.g. , MoSe 2 ) as the input and delivers lateral heterostructures ( e.g. , MoSe 2 -MoS 2 ) with fully engineerable morphologies. In addition, through establishing MoS 2 x Se 2(1- x ) -MoS 2 y Se 2(1- y ) lateral junctions, our synthesis protocol offers an extra degree of freedom for engineering the band gap energies up to ∼320 meV on each side of the heterostructure junction via changing x and y independently. Our electron microscopy analysis reveals that such continuous tuning stems from the random intermixing of sulfur and selenium atoms following the chalcogen swapping. We believe that, by adding an engineering flavor to the synthesis of TMD heterostructures, our study lowers the barrier for the integration of two-dimensional materials into practical optoelectronic platforms.
Databáze: MEDLINE