| Autor: |
Bayogan JR; Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea. DGIST Research Institute, DGIST, Daegu 42988, Republic of Korea., Park K, Siu ZB, An SJ, Tang CC, Zhang XX, Song MS, Park J, Jalil MBA, Nagaosa N, Hirakawa K, Schönenberger C, Seo J, Jung M |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2020 May 15; Vol. 31 (20), pp. 205001. Date of Electronic Publication: 2020 Jan 21. |
| DOI: |
10.1088/1361-6528/ab6dfe |
| Abstrakt: |
We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd 3 As 2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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