Current-Induced Gap Opening in Interacting Topological Insulator Surfaces.

Autor: Balram AC; Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark.; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark.; The Institute of Mathematical Sciences, HBNI, CIT Campus, Chennai 600113, India., Flensberg K; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark., Paaske J; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark., Rudner MS; Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark.; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark.
Jazyk: angličtina
Zdroj: Physical review letters [Phys Rev Lett] 2019 Dec 13; Vol. 123 (24), pp. 246803.
DOI: 10.1103/PhysRevLett.123.246803
Abstrakt: Two-dimensional topological insulators (TIs) host gapless helical edge states that are predicted to support a quantized two-terminal conductance. Quantization is protected by time-reversal symmetry, which forbids elastic backscattering. Paradoxically, the current-carrying state itself breaks the time-reversal symmetry that protects it. Here we show that the combination of electron-electron interactions and momentum-dependent spin polarization in helical edge states gives rise to feedback through which an applied current opens a gap in the edge state dispersion, thereby breaking the protection against elastic backscattering. Current-induced gap opening is manifested via a nonlinear contribution to the system's I-V characteristic, which persists down to zero temperature. We discuss prospects for realizations in recently discovered large bulk band gap TIs, and an analogous current-induced gap opening mechanism for the surface states of three-dimensional TIs.
Databáze: MEDLINE