Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu 2 O and Nanomembrane β-Ga 2 O 3 pn Oxide Heterojunction.

Autor: Bae H; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Charnas A; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Sun X; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Noh J; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Si M; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Chung W; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Qiu G; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Lyu X; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Alghamdi S; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Wang H; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Zemlyanov D; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States., Ye PD; School of Electrical and Computer Engineering, Birck Nanotechnology Center, School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
Jazyk: angličtina
Zdroj: ACS omega [ACS Omega] 2019 Nov 22; Vol. 4 (24), pp. 20756-20761. Date of Electronic Publication: 2019 Nov 22 (Print Publication: 2019).
DOI: 10.1021/acsomega.9b03149
Abstrakt: Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu 2 O) underneath a mechanically exfoliated n-type β-gallium oxide (β-Ga 2 O 3 ) nanomembrane. The atomic layer deposition process of the Cu 2 O film applies bis( N , N '-di-secbutylacetamidinato)dicopper(I) [Cu( 5 Bu-Me-amd)] 2 as a novel Cu precursor and water vapor as an oxidant. The exfoliated β-Ga 2 O 3 nanomembrane was transferred to the top of the Cu 2 O layer surface to realize a unique oxide pn heterojunction, which is not easy to realize by conventional oxide epitaxy techniques. The current-voltage ( I - V ) characteristics of the fabricated pn heterojunction diode show the typical rectifying behavior. The fabricated Cu 2 O/β-Ga 2 O 3 photodetector achieves sensitive detection of current at the picoampere scale in the reverse mode. This work provides a new approach to integrate all oxide heterojunctions using membrane transfer and bonding techniques, which goes beyond the limitation of conventional heteroepitaxy.
Competing Interests: The authors declare no competing financial interest.
(Copyright © 2019 American Chemical Society.)
Databáze: MEDLINE
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