| Autor: |
Kiani KM, Frankis HC, Mbonde HM, Mateman R, Leinse A, Knights AP, Bradley JDB |
| Jazyk: |
angličtina |
| Zdroj: |
Optics letters [Opt Lett] 2019 Dec 01; Vol. 44 (23), pp. 5788-5791. |
| DOI: |
10.1364/OL.44.005788 |
| Abstrakt: |
We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.7 dB/cm at 1479 nm based on the quality factor measured in microring resonators. Gain measurements were carried out in straight and 6.7-cm-long s-bend waveguides realized on a 2.2-cm-long chip. We measure internal net gain over the wavelength range 1860-2000 nm under 1620 nm pumping and up to 7.6 dB total gain at 1870 nm, corresponding to 1.1 dB/cm. These results are promising for the realization of highly compact thulium-doped amplifiers in the emerging 2 μm band for silicon-based photonic microsystems. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
|
