Giant non-linear susceptibility of hydrogenic donors in silicon and germanium.

Autor: Le NH; 1Advanced Technology Institute and SEPNet, University of Surrey, Guildford, GU2 7XH UK., Lanskii GV; 2Institute of Monitoring of Climatic and Ecological Systems SB RAS, 10/3 Academical Ave., Tomsk, 634055 Russia., Aeppli G; 3Laboratory for Solid State Physics, ETH Zurich, Zurich, CH-8093 Switzerland.; 4Institut de Physique, EPF Lausanne, Lausanne, CH-1015 Switzerland.; 5Paul Scherrer Institut, Villigen, PSI CH-5232 Switzerland., Murdin BN; 1Advanced Technology Institute and SEPNet, University of Surrey, Guildford, GU2 7XH UK.
Jazyk: angličtina
Zdroj: Light, science & applications [Light Sci Appl] 2019 Jul 10; Vol. 8, pp. 64. Date of Electronic Publication: 2019 Jul 10 (Print Publication: 2019).
DOI: 10.1038/s41377-019-0174-6
Abstrakt: Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption has useful applications, it is primarily a loss process; conversely, the non-linear susceptibility is a crucial parameter for active photonic devices. For Si:P, we predict the hyperpolarizability ranges from χ (3) / n 3D  = 2.9 to 580 × 10 -38  m 5 /V 2 depending on the frequency, even while avoiding resonance. Using samples of a reasonable density, n 3D , and thickness, L , to produce third-harmonic generation at 9 THz, a frequency that is difficult to produce with existing solid-state sources, we predict that χ (3) should exceed that of bulk InSb and χ (3) L should exceed that of graphene and resonantly enhanced quantum wells.
Competing Interests: Conflict of interestThe authors declare that they have no conflict of interest.
(© The Author(s) 2019.)
Databáze: MEDLINE
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