Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Autor: Schmucker SW; University of Maryland, College Park, Maryland 20742, USA., Namboodiri PN; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Kashid R; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Wang X; University of Maryland, College Park, Maryland 20742, USA., Hu B; University of Maryland, College Park, Maryland 20742, USA., Wyrick JE; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Myers AF; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Schumacher JD; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Silver RM; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Stewart MD Jr; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA.
Jazyk: angličtina
Zdroj: Physical review applied [Phys Rev Appl] 2019; Vol. 11.
DOI: 10.1103/PhysRevApplied.11.034071
Abstrakt: Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ -doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd 2 Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. We use the transfer length method to show our Pd 2 Si contacts have very high yield (99.7% +0.2% -1.5%) and low resistivity (272±41Ω μ m) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% -3.2%).
Databáze: MEDLINE
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