Room-Temperature Routes Toward the Creation of Zinc Oxide Films from Molecular Precursors.

Autor:	Gonzalez Arellano DL; Department of Materials and London Centre for Nanotechnology, Imperial College London, SW7 2AZ London, U.K., Bhamrah J; Department of Materials and London Centre for Nanotechnology, Imperial College London, SW7 2AZ London, U.K., Yang J; Department of Materials and London Centre for Nanotechnology, Imperial College London, SW7 2AZ London, U.K., Gilchrist JB; Department of Materials and London Centre for Nanotechnology, Imperial College London, SW7 2AZ London, U.K., McComb DW; Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43212, United States., Ryan MP; Department of Materials and London Centre for Nanotechnology, Imperial College London, SW7 2AZ London, U.K., Heutz S; Department of Materials and London Centre for Nanotechnology, Imperial College London, SW7 2AZ London, U.K.
Jazyk:	angličtina
Zdroj:	ACS omega [ACS Omega] 2017 Jan 12; Vol. 2 (1), pp. 98-104. Date of Electronic Publication: 2017 Jan 12 (Print Publication: 2017).
DOI:	10.1021/acsomega.6b00324
Abstrakt:	The fabrication of "flexible" electronics on plastic substrates with low melting points requires the development of thin-film deposition techniques that operate at low temperatures. This is easily achieved with vacuum- or solution-processed molecular or polymeric semiconductors, but oxide materials remain a significant challenge. Here, we show that zinc oxide (ZnO) can be prepared using only room-temperature processes, with the molecular thin-film precursor zinc phthalocyanine (ZnPc), followed by UV-light treatment in vacuum to elicit degradation of the organic components and transformation of the deposited film to the oxide material. The degradation mechanism was assessed by studying the influence of the atmosphere during the reaction: it was particularly sensitive to the oxygen pressure in the chamber and optimal degradation conditions were established as 3 mbar with 40% oxygen in nitrogen. The morphology of the film remained relatively unchanged during the reaction, but a detailed analysis of its composition using both scanning transmission electron microscopy and secondary ion mass spectrometry revealed that a 40 nm thick layer containing ZnO results from the 100 nm thick precursor after complete reaction. Our methodology represents a simple route for the fabrication of oxides and multilayer structures that can be easily integrated into current molecular thin-film growth setups, without the need for a high-temperature step. Competing Interests: The authors declare no competing financial interest.
Databáze:	MEDLINE
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