| Autor: |
Palade C; National Institute of Materials Physics, 405A Atomistilor Street, 77125 Magurele, Romania., Slav A, Lepadatu AM, Stavarache I, Dascalescu I, Maraloiu AV, Negrila C, Logofatu C, Stoica T, Teodorescu VS, Ciurea ML, Lazanu S |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2019 Nov 01; Vol. 30 (44), pp. 445501. Date of Electronic Publication: 2019 Nov 01. |
| DOI: |
10.1088/1361-6528/ab352b |
| Abstrakt: |
Trilayer memory capacitors of control HfO 2 /floating gate of Ge nanoparticles in HfO 2 /tunnel HfO 2 /Si substrate deposited by magnetron sputtering and subsequently annealed are investigated for the first time for applications in radiation dosimetry. In the floating gate (FG), amorphous Ge nanoparticles (NPs) are arranged in two rows inside the HfO 2 matrix. The HfO 2 matrix is formed of orthorhombic/tetragonal nanocrystals (NCs). The adjacent thin films to the FG are also formed of orthorhombic/tetragonal HfO 2 NCs. This phase is formed during annealing, in samples with thick control HfO 2 , in the presence of Ge, being induced by the stress. In the rest of the control oxide, HfO 2 NCs are monoclinic. Orthorhombic HfO 2 has ferroelectric properties and therefore enhances the memory window produced by charge storage in Ge NPs to above 6 V. The high sensitivity of 0.8 mV Gy -1 to α particle irradiation from a 241 Am source was measured by monitoring the flatband potential during radiation exposure after electrical writing of the memory. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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