| Autor: |
Uthayaraj S; Department of Physics, University of Jaffna, Jaffna 40000, Sri Lanka.; Faculty of Engineering and Science, Western Norway University of Applied Sciences, P.O. Box 7030, 5020 Bergen, Norway., Karunarathne DGBC; National Institute of Fundamental Studies, Hantana Road, Kandy 20000, Sri Lanka., Kumara GRA; National Institute of Fundamental Studies, Hantana Road, Kandy 20000, Sri Lanka., Murugathas T; Department of Physics, University of Jaffna, Jaffna 40000, Sri Lanka., Rasalingam S; Department of Chemistry, University of Jaffna, Jaffna 40000, Sri Lanka., Rajapakse RMG; Department of Chemistry, Faculty of Science, University of Peradeniya, Peradeniya 20400, Sri Lanka., Ravirajan P; Department of Physics, University of Jaffna, Jaffna 40000, Sri Lanka. Dhayalan.Velauthapillai@hvl.no., Velauthapillai D; Faculty of Engineering and Science, Western Norway University of Applied Sciences, P.O. Box 7030, 5020 Bergen, Norway. pravirajan@gmail.com. |
| Abstrakt: |
This study focuses on employing cuprous iodide (CuI) as a hole-transporting material (HTM) in fabricating highly efficient perovskite solar cells (PSCs). The PSCs were made in air with either CuI or 2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD) as HTMs. A simple and novel pressing method was employed for incorporating CuI powder layer between perovskite layer and Pt top-contact to fabricate devices with CuI, while spiro-OMeTAD was spin-coated between perovskite layer and thermally evaporated Au top-contact to fabricate devices with spiro-OMeTAD. Under illuminations of 100 mW/cm 2 with an air mass (AM) 1.5 filter in air, the average short-circuit current density (J SC ) of the CuI devices was over 24 mA/cm 2 , which is marginally higher than that of spiro-OMeTAD devices. Higher J SC of the CuI devices can be attributed to high hole-mobility of CuI that minimizes the electron-hole recombination. However, the average power conversion efficiency (PCE) of the CuI devices were lower than that of spiro-OMeTAD devices due to slightly lower open-circuit voltage (V OC ) and fill factor (FF). This is probably due to surface roughness of CuI powder. However, optimized devices with solvent-free powder pressed CuI as HTM show a promising efficiency of over 8.0 % under illuminations of 1 sun (100 mW/cm 2 ) with an air mass 1.5 filter in air, which is the highest among the reported efficiency values for PSCs fabricated in an open environment with CuI as HTM. |
