| Abstrakt: |
Copper zinc tin sulfo-selenide (CZTSSe) is a promising light-absorbing material of thin-film solar cells because of its low material cost especially when it is prepared by cost-effective processes like the electrochemical deposition process. The CZTSSe thin-film solar cells, however, suffer from the relatively low efficiency, mostly because of the significant charge recombination. Given that the surface recombination is one of the major recombination paths, controlling the surface roughness, and thus the interfacial area is one of the key factors for improving their device performances. In this study, we demonstrated a simple but effective strategy for reducing the surface roughness during the electrochemical deposition process of the CZTSSe thin films. By adopting an initial nucleation stage with higher deposition currents ahead of the steady-state galvanostatic deposition, the surface of the copper-zinc-tin (CZT) precursor and CZTSSe thin films became significantly smoother and uniform (Δ R rms : -43.8% for CZT, -28.9% for CZTSSe). The effects of the surface roughness on the photovoltaic properties of the CZTSSe thin-film solar cells have been investigated systematically with various characterization techniques like the diode analysis, lifetime measurement, and the temperature dependency of the open-circuit voltage. The device with the smoother surface exhibited higher open-circuit voltage and fill factor, mostly because of the significantly reduced charge recombination, leading to the high conversion efficiency of 8.64% (active). |
