Influence of Te-Doping on Catalyst-Free VS InAs Nanowires.

Autor: Güsken NA; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany.; JARA-Fundamentals of Future Information Technology (JARA-FIT), Jülich-Aachen Research Alliance, Jülich, Germany., Rieger T; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany.; JARA-Fundamentals of Future Information Technology (JARA-FIT), Jülich-Aachen Research Alliance, Jülich, Germany., Mussler G; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany.; JARA-Fundamentals of Future Information Technology (JARA-FIT), Jülich-Aachen Research Alliance, Jülich, Germany., Lepsa MI; Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany. m.lepsa@fz-juelich.de.; JARA-Fundamentals of Future Information Technology (JARA-FIT), Jülich-Aachen Research Alliance, Jülich, Germany. m.lepsa@fz-juelich.de., Grützmacher D; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany.; Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany.; JARA-Fundamentals of Future Information Technology (JARA-FIT), Jülich-Aachen Research Alliance, Jülich, Germany.
Jazyk: angličtina
Zdroj: Nanoscale research letters [Nanoscale Res Lett] 2019 May 28; Vol. 14 (1), pp. 179. Date of Electronic Publication: 2019 May 28.
DOI: 10.1186/s11671-019-3004-0
Abstrakt: We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about 1 × 10 -5  Torr while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is strongly affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure.
Databáze: MEDLINE
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