High-K dielectric sulfur-selenium alloys.

Autor: Susarla S; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Tsafack T; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Owuor PS; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Puthirath AB; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Hachtel JA; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA., Babu G; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Apte A; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Jawdat BI; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Hilario MS; Air Force Research Laboratory, Kirtland Air Force Base, Albuquerque, NM 87117, USA., Lerma A; Leidos Inc., Albuquerque, NM 87106, USA., Calderon HA; Mechanical Engineering Technology, University of Houston, Houston, TX 77204, USA., Robles Hernandez FC; Instituto Politécnico Nacional, ESFM, UPALM, Zacatenco, Mexico CDMX 07338, Mexico., Tam DW; Department of Physics and Astronomy, Rice University, Houston, TX 77005, USA., Li T; Department of Mechanical Engineering, University of Delaware, Newark, DE 19716, USA., Lupini AR; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA., Idrobo JC; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA., Lou J; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA., Wei B; Department of Mechanical Engineering, University of Delaware, Newark, DE 19716, USA., Dai P; Department of Physics and Astronomy, Rice University, Houston, TX 77005, USA., Tiwary CS; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA.; Department of Materials Science and Engineering, Indian Institute of Technology, Kharagpur-721302, India., Ajayan PM; Department of Materials Science and Nano-engineering, Rice University, Houston, TX 77005, USA.
Jazyk: angličtina
Zdroj: Science advances [Sci Adv] 2019 May 10; Vol. 5 (5), pp. eaau9785. Date of Electronic Publication: 2019 May 10 (Print Publication: 2019).
DOI: 10.1126/sciadv.aau9785
Abstrakt: Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.
Databáze: MEDLINE