| Autor: |
Hamdy KW, Young EC, Alhassan AI, Becerra DL, DenBaars SP, Speck JS, Nakamura S |
| Jazyk: |
angličtina |
| Zdroj: |
Optics express [Opt Express] 2019 Mar 18; Vol. 27 (6), pp. 8327-8334. |
| DOI: |
10.1364/OE.27.008327 |
| Abstrakt: |
We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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