Room-temperature, atmospheric-pressure microsputtering of dense, electrically conductive, sub-100 nm gold films.

Autor: Kornbluth YS; Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave. Cambridge, MA 02139, United States of America., Mathews RH, Parameswaran L, Racz LM, Velásquez-García LF
Jazyk: angličtina
Zdroj: Nanotechnology [Nanotechnology] 2019 Jul 12; Vol. 30 (28), pp. 285602. Date of Electronic Publication: 2019 Apr 24.
DOI: 10.1088/1361-6528/ab1281
Abstrakt: In this study, we investigate the effects of deposition parameters (i.e. gas flow rates, bias voltages, and nozzle-to-substrate separation) on the microstructure of <100 nm thick gold deposits made with a room-temperature, atmospheric-pressure, ion-drag microsputterer. Without resorting to the use of vacuum or substrate heating, optimization of the printing process yields dense, continuous deposits (96.5% coverage) with low electrical resistivity (45 μΩ cm). Using statistical analysis, we developed a simple model that provides insight into the dynamics of such a printing method; based on this model, we identify electrostatic effects as the most important factor that influences the deposition process.
Databáze: MEDLINE