Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures.

Autor: Aziziyan MR; Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada., Sharma H; Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada., Dubowski JJ; Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada.
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 May 15; Vol. 11 (19), pp. 17968-17978. Date of Electronic Publication: 2019 May 02.
DOI: 10.1021/acsami.9b02079
Abstrakt: Photo-atomic layer etching (photo-ALE) of GaAs and AlGaAs semiconductors was investigated in deionized H 2 O and aqueous solution of NH 4 OH under weak excitation conditions ( P ≈ 20 mW/cm 2 ). The process is based on digital photocorrosion in a processed solution and a negligible corrosion during the light-off phase employed for dissolution of the photocorrosion products. An inductively coupled plasma mass spectroscopy (ICP-MS) analysis revealed that photo-ALE of GaAs in an aqueous solution of NH 4 OH proceeds linearly with the number of reaction cycles, typically at ∼0.1 nm/cycle, and with the light-off phase as short as 22 s sufficient to entirely dissolve the photocorrosion products generated during a 3 s irradiation. In agreement with the ICP-MS data, the constant photo-ALE rates in NH 4 OH were also demonstrated in situ with the photoluminescence measurements. Our results suggest that the congruent decomposition of III-V materials and the etching of deep structures with atomic layer resolution could be facilitated by switching in situ between different etching environments.
Databáze: MEDLINE
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