| Autor: |
Nedeljkovic M, Littlejohns CG, Khokhar AZ, Banakar M, Cao W, Penades JS, Tran DT, Gardes FY, Thomson DJ, Reed GT, Wang H, Mashanovich GZ |
| Jazyk: |
angličtina |
| Zdroj: |
Optics letters [Opt Lett] 2019 Feb 15; Vol. 44 (4), pp. 915-918. |
| DOI: |
10.1364/OL.44.000915 |
| Abstrakt: |
Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a V π L π of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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