Electrostatic Control of Insulator-Metal Transition in La-doped SrSnO 3 Films.

Autor: Thoutam LR; Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States., Yue J; Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States., Prakash A; Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States., Wang T; Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States., Elangovan KE; Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States., Jalan B; Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States.
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 Feb 27; Vol. 11 (8), pp. 7666-7670. Date of Electronic Publication: 2019 Feb 18.
DOI: 10.1021/acsami.8b22034
Abstrakt: We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO 3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (-4 V ≤ V g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO 3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.
Databáze: MEDLINE
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