| Autor: |
Gluschke JG; School of Physics, University of New South Wales, Sydney NSW 2052, Australia., Seidl J, Burke AM, Lyttleton RW, Carrad DJ, Ullah AR, Fahlvik S, Lehmann S, Linke H, Micolich AP |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2019 Feb 08; Vol. 30 (6), pp. 064001. |
| DOI: |
10.1088/1361-6528/aaf1e5 |
| Abstrakt: |
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec -1 at 77 K for a 150 nm gate length. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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