| Autor: |
Rost L; Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany., Gies S, Stein M, Fuchs C, Nau S, Kükelhan P, Volz K, Stolz W, Koch M, Heimbrodt W |
| Jazyk: |
angličtina |
| Zdroj: |
Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2019 Jan 09; Vol. 31 (1), pp. 014001. Date of Electronic Publication: 2018 Nov 30. |
| DOI: |
10.1088/1361-648X/aaee93 |
| Abstrakt: |
(Ga,In)As/GaAs/Ga(As,Sb) and (Ga,In)As/GaAs/Ga(N,As) type-II double quantum well heterostructures have been grown by metal-organic vapor phase epitaxy. A growth interruption procedure was used to intentionally modify the morphology of the internal interfaces. The heterostructures were investigated using continuous wave and time-resolved photoluminescence as well as optical pump-optical probe spectroscopy. We find a correlation between the interface morphology and optical and kinetic properties. A growth interruption of about 120 s yielded substantially smoother interfaces both on vertical as well as lateral length scales. On the other hand a considerably enhanced type-II recombination time as well as a longer electron tunneling time are observed. We attribute this to a reduced interface localization in case of smoother interfaces. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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