High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

Autor: Zhou G; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Addou R; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Wang Q; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Honari S; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Cormier CR; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Cheng L; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Yue R; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Smyth CM; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Laturia A; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Kim J; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Vandenberghe WG; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Kim MJ; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Wallace RM; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA., Hinkle CL; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA.; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2018 Jul 18, pp. e1803109. Date of Electronic Publication: 2018 Jul 18.
DOI: 10.1002/adma.201803109
Abstrakt: The transfer-free direct growth of high-performance materials and devices can enable transformative new technologies. Here, room-temperature field-effect hole mobilities as high as 707 cm 2 V -1 s -1 are reported, achieved using transfer-free, low-temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO 2 /Si. The Te nanostructures exhibit significantly higher device performance than other low-temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high-performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO 2 /Si and HfO 2 . The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer-free direct growth of high-mobility Te devices can enable major technological breakthroughs, as the low-temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications.
(© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Databáze: MEDLINE
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