| Autor: |
Araújo AL; Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, Minas Gerais, 38400-902, Brazil. augusto-lelis@hotmail.com., Ferreira GJ; Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, Minas Gerais, 38400-902, Brazil. gersonjferreira@ufu.br., Schmidt TM; Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, Minas Gerais, 38400-902, Brazil. tschmidt@ufu.br. |
| Jazyk: |
angličtina |
| Zdroj: |
Scientific reports [Sci Rep] 2018 Jun 21; Vol. 8 (1), pp. 9452. Date of Electronic Publication: 2018 Jun 21. |
| DOI: |
10.1038/s41598-018-27827-x |
| Abstrakt: |
We combine first principles calculations with a group theory analysis to investigate topological phase transitions in the stacking of SnTe monolayers. We show that distinct finite stacking yields different symmetry-imposed degeneracy, which dictates the hybridization properties of opposite surface states. For SnTe aligned along the [001] direction, an (even) odd number of monolayers yields a (non)symmorphic space group. For the symmorphic case, the hybridization of surface states lead to band inversions and topological phase transitions as the sample height is reduced. In contrast, for a nonsymmorphic stacking, an extra degeneracy is guaranteed by symmetry, thus avoiding the hybridization and topological phase transitions, even in the limit of a few monolayers. Our group theory analysis provide a clear picture for this phenomenology and matches well the first principles calculations. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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