Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.

Autor: Park Y; School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea., Chan CCS; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China., Nuttall L; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK., Puchtler TJ; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK. tim.puchtler@physics.ox.ac.uk., Taylor RA; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK., Kim N; Department of Physics, Soongsil University, Seoul, 06978, Korea., Jo Y; Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Korea., Im H; Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Korea. hyunsik7@dongguk.edu.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2018 May 25; Vol. 8 (1), pp. 8124. Date of Electronic Publication: 2018 May 25.
DOI: 10.1038/s41598-018-26642-8
Abstrakt: We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn't show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO 2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.
Databáze: MEDLINE