Ultrathin Bismuth Film on 1T-TaS 2 : Structural Transition and Charge-Density-Wave Proximity Effect.

Autor: Yamada K; Department of Physics , Tohoku University , Sendai 980-8578 , Japan., Souma S; Center for Spintronics Research Network , Tohoku University , Sendai 980-8577 , Japan.; WPI Research Center, Advanced Institute for Materials Research , Tohoku University , Sendai 980-8577 , Japan., Yamauchi K; Institute of Scientific and Industrial Research , Osaka University , Ibaraki, Osaka 567-0047 , Japan., Shimamura N; Department of Physics , Tohoku University , Sendai 980-8578 , Japan., Sugawara K; Center for Spintronics Research Network , Tohoku University , Sendai 980-8577 , Japan.; WPI Research Center, Advanced Institute for Materials Research , Tohoku University , Sendai 980-8577 , Japan., Trang CX; Department of Physics , Tohoku University , Sendai 980-8578 , Japan., Oguchi T; Institute of Scientific and Industrial Research , Osaka University , Ibaraki, Osaka 567-0047 , Japan., Ueno K; Department of Chemistry, Graduate School of Science and Engineering , Saitama University , Saitama 338-8570 , Japan., Takahashi T; Department of Physics , Tohoku University , Sendai 980-8578 , Japan.; Center for Spintronics Research Network , Tohoku University , Sendai 980-8577 , Japan.; WPI Research Center, Advanced Institute for Materials Research , Tohoku University , Sendai 980-8577 , Japan., Sato T; Department of Physics , Tohoku University , Sendai 980-8578 , Japan.; Center for Spintronics Research Network , Tohoku University , Sendai 980-8577 , Japan.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2018 May 09; Vol. 18 (5), pp. 3235-3240. Date of Electronic Publication: 2018 Apr 30.
DOI: 10.1021/acs.nanolett.8b01003
Abstrakt: We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS 2 and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS 2 undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level ( E F ), the energy band of the same film on 1T-TaS 2 exhibits holelike dispersion with a finite energy gap at E F . We discuss the origin of such intriguing differences in terms of the CDW proximity effect.
Databáze: MEDLINE
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