| Autor: |
Goktas NI; Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7, Canada. Munzur University, Aktuluk Yerleskesi, 62000, Tunceli, Turkey., Fiordaliso EM, LaPierre RR |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2018 Jun 08; Vol. 29 (23), pp. 234001. Date of Electronic Publication: 2018 Mar 15. |
| DOI: |
10.1088/1361-6528/aab6f1 |
| Abstrakt: |
Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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