Temperature dependence of bulk luminescence from ZnO.

Autor: Cui M; School of Science, China University of Geosciences, Beijing, P.R. China., Zhang Z; School of Science, China University of Geosciences, Beijing, P.R. China., Wang Y; School of Science, China University of Geosciences, Beijing, P.R. China., Finch A; Department of Earth & Environmental Sciences, University of St Andrews, St Andrews, Fife, UK., Townsend PD; Physics Building, University of Sussex, Brighton, UK.
Jazyk: angličtina
Zdroj: Luminescence : the journal of biological and chemical luminescence [Luminescence] 2018 Jun; Vol. 33 (4), pp. 654-659. Date of Electronic Publication: 2018 Mar 02.
DOI: 10.1002/bio.3460
Abstrakt: X-Ray excited luminescence (radioluminescence, RL) spectra from nominally pure crystalline zinc oxide (ZnO) are reported. The temperature range is from 20 to 673 K. Significant changes of emission band energies and intensities are observed across the temperature range. Photon energies of emission bands linked to the band gap decrease with increasing temperature in RL. This dependence fits the theoretical equations describing the temperature response of the ZnO band gap. Defect related luminescence includes a complex mixture of features at low temperature for RL. Thermoluminescence (TL) signals from 20 to 300 K confirm the presence of an unresolved feature in the RL data. Comments on the possible origin of these bands are summarized. The data underline that it is essential to record the temperature dependence for the luminescence data in order to separate overlapping spectral features.
(Copyright © 2018 John Wiley & Sons, Ltd.)
Databáze: MEDLINE
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