| Autor: |
Choi SB; Department of Physics, Dong-A University, Hadan-2-dong, Saha-gu, Busan 49315, Republic of Korea., Song MS, Kim Y |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2018 Apr 06; Vol. 29 (14), pp. 145702. |
| DOI: |
10.1088/1361-6528/aaab16 |
| Abstrakt: |
The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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