Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.
Autor: | Goswami S, Matula AJ, Rath SP, Hedström S, Saha S, Annamalai M, Sengupta D, Patra A, Ghosh S, Jani H, Sarkar S, Motapothula MR, Nijhuis CA, Martin J, Goswami S, Batista VS, Venkatesan T |
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Jazyk: | angličtina |
Zdroj: | Nature materials [Nat Mater] 2017 Dec 19; Vol. 17 (1), pp. 103. |
DOI: | 10.1038/nmat5059 |
Abstrakt: | This corrects the article DOI: 10.1038/nmat5009. |
Databáze: | MEDLINE |
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