Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.

Autor: Goswami S, Matula AJ, Rath SP, Hedström S, Saha S, Annamalai M, Sengupta D, Patra A, Ghosh S, Jani H, Sarkar S, Motapothula MR, Nijhuis CA, Martin J, Goswami S, Batista VS, Venkatesan T
Jazyk: angličtina
Zdroj: Nature materials [Nat Mater] 2017 Dec 19; Vol. 17 (1), pp. 103.
DOI: 10.1038/nmat5059
Abstrakt: This corrects the article DOI: 10.1038/nmat5009.
Databáze: MEDLINE