| Autor: |
Dogan M, Fernandez-Peña S; Department of Quantum Matter Physics, Université de Genève , Genève 1211, Switzerland., Kornblum L, Jia Y, Kumah DP, Reiner JW, Krivokapic Z; GLOBALFOUNDRIES, Santa Clara, California 95054, United States., Kolpak AM; Department of Mechanical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Ismail-Beigi S, Ahn CH, Walker FJ |
| Jazyk: |
angličtina |
| Zdroj: |
Nano letters [Nano Lett] 2018 Jan 10; Vol. 18 (1), pp. 241-246. Date of Electronic Publication: 2017 Dec 26. |
| DOI: |
10.1021/acs.nanolett.7b03988 |
| Abstrakt: |
A single atomic layer of ZrO 2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO 2 gate stack demonstrate that a reversible polarization of the ZrO 2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5-10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811). |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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