Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.

Autor: Glavin NR; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, 45433, USA., Chabak KD; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 45433, USA., Heller ER; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, 45433, USA., Moore EA; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, 45433, USA.; KBRwyle, Dayton, OH, 45431, USA., Prusnick TA; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 45433, USA.; KBRwyle, Dayton, OH, 45431, USA., Maruyama B; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, 45433, USA., Walker DE Jr; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 45433, USA., Dorsey DL; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH, 45433, USA., Paduano Q; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 45433, USA., Snure M; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 45433, USA.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2017 Dec; Vol. 29 (47). Date of Electronic Publication: 2017 Nov 02.
DOI: 10.1002/adma.201701838
Abstrakt: Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm 2 V -1 s -1 and sheet carrier density above 1.07 × 10 13 cm -2 . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.
(© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Databáze: MEDLINE
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