An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.

Autor:	Moghadam RM; Department of Physics, University of Texas-Arlington , Arlington, Texas 76019, United States., Xiao Z; Department of Physics and Astronomy, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States., Ahmadi-Majlan K; Department of Physics, University of Texas-Arlington , Arlington, Texas 76019, United States., Grimley ED; Department of Materials Science and Engineering, North Carolina State University , Raleigh, North Carolina 27695, United States., Bowden M; Environmental Molecular Sciences Laboratory, Earth & Biological Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Ong PV; Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Chambers SA; Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Lebeau JM; Department of Materials Science and Engineering, North Carolina State University , Raleigh, North Carolina 27695, United States., Hong X; Department of Physics and Astronomy, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States., Sushko PV; Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Ngai JH; Department of Physics, University of Texas-Arlington , Arlington, Texas 76019, United States.
Jazyk:	angličtina
Zdroj:	Nano letters [Nano Lett] 2017 Oct 11; Vol. 17 (10), pp. 6248-6257. Date of Electronic Publication: 2017 Sep 13.
DOI:	10.1021/acs.nanolett.7b02947
Abstrakt:	The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZr x Ti 1-x O 3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZr x Ti 1-x O 3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.
Databáze:	MEDLINE
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