Domain wall motion in Pb(Zr 0.20 Ti 0.80 )O 3 epitaxial thin films.

Autor:	Borderon C; IETR UMR CNRS 6164, Université de Nantes, 2 rue de la Houssinière, 44322, Nantes, France. caroline.borderon@univ-nantes.fr., Brunier AE; University of Warwick, Department of Physics, Gibbet Hill Road, Coventry, CV4 7AL, United Kingdom., Nadaud K; GREMAN, CNRS UMR 7347, 16 rue Pierre et Marie Curie, 37071, Tours Cedex 2, France., Renoud R; IETR UMR CNRS 6164, Université de Nantes, 2 rue de la Houssinière, 44322, Nantes, France., Alexe M; University of Warwick, Department of Physics, Gibbet Hill Road, Coventry, CV4 7AL, United Kingdom., Gundel HW; IETR UMR CNRS 6164, Université de Nantes, 2 rue de la Houssinière, 44322, Nantes, France.
Jazyk:	angličtina
Zdroj:	Scientific reports [Sci Rep] 2017 Jun 13; Vol. 7 (1), pp. 3444. Date of Electronic Publication: 2017 Jun 13.
DOI:	10.1038/s41598-017-03757-y
Abstrakt:	Two Pb(Zr 0.20 Ti 0.80 )O 3 samples of different thickness and domain configuration have been studied. The c-domain sample was found to have a higher coercive field E c and higher dielectric losses than the other which presents approximately 60% of c-domains and 40% of a-domains as observed by piezo force microscopy (PFM) characterization. Hyperbolic law measurements reveal that the higher coercive field is due to domain wall pinning in deeper defects and hence a higher field E th is required for unpinning. The dissipation factors due to domain wall motion, however, are similar in both samples since the domain wall density is low and there is almost no interaction between domain walls. The higher dielectric losses in the c-domain oriented sample are a result of a greater contribution from the lattice and seem to be due to strain from the substrate, which is not relieved in a thin sample. PFM and dielectric characterization are complementary methods which provide a better understanding of the domain wall motion.
Databáze:	MEDLINE
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