| Autor: |
Puybaret R; Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France., Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2017 May 12; Vol. 28 (19), pp. 195304. Date of Electronic Publication: 2017 Mar 30. |
| DOI: |
10.1088/1361-6528/aa6a43 |
| Abstrakt: |
Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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