| Autor: |
Babaro JP; Instituto Nacional de Tecnología Industrial- Física y Metrología, San Martín, Buenos Aires, Argentina., West KG; SensorMetrix, San Diego, Ca, 92126., Hamadani BH; National Institute of Standards and Technology, Engineering Laboratory, Gaithersburg, MD 20899 USA. |
| Jazyk: |
angličtina |
| Zdroj: |
Energy science & engineering [Energy Sci Eng] 2016 Nov; Vol. 4 (6), pp. 372-382. Date of Electronic Publication: 2016 Oct 25. |
| DOI: |
10.1002/ese3.141 |
| Abstrakt: |
Spectral response measurements of germanium-based triple-junction solar cells were performed under a variety of light and voltage bias conditions. Two of the three junctions exhibited voltage and light bias dependent artifacts in their measured responses, complicating the true spectral response of these junctions. To obtain more insight into the observed phenomena, a set of current-voltage measurement combinations were also performed on the solar cells under identical illumination conditions, and the data were used in the context of a diode-based analytical model to calculate and predict the spectral response behavior of each junction as a function of voltage. The analysis revealed that both low shunt resistance and low breakdown voltages in two of the three junctions influenced the measured quantum efficiency of all three junctions. The data and the modeling suggest that combination of current-voltage measurements under various light bias sources can reveal important information about the spectral response behavior in multijunction solar cells. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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