| Autor: |
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia. Novosibirsk State University, 630090, Novosibirsk, Russia., Kurkina II, Nebogatikova NA, Komonov AI, Smagulova SA |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2017 Feb 17; Vol. 28 (7), pp. 074001. Date of Electronic Publication: 2017 Jan 13. |
| DOI: |
10.1088/1361-6528/28/7/074001 |
| Abstrakt: |
The band structure and electric properties of films created from a partially fluorinated graphene suspension are analyzed in this paper. As may be inferred from the structural study, graphene islands (quantum dots) are formed in these films. Various types of negative differential resistance (NDR) and a step-like increase in the current are found for films created from the fluorinated graphene suspension. NDR resulting from the formation of the potential barrier system in the film and corresponding to the theoretical prediction is observed for a relatively low fluorination degree. The origin of the NDR varies with an increase in the fluorination degree of the suspension. The observation of NDR in the fluorinated films widens the range of application of such films, including as active device layers fabricated using 2D printed technologies on rigid and flexible substrates. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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