| Autor: |
Maniyara RA; ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, Castelldefels, 08860 Barcelona, Spain., Mkhitaryan VK; ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, Castelldefels, 08860 Barcelona, Spain., Chen TL; ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, Castelldefels, 08860 Barcelona, Spain., Ghosh DS; ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, Castelldefels, 08860 Barcelona, Spain., Pruneri V; ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, Castelldefels, 08860 Barcelona, Spain.; ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys, 23, 08010 Barcelona, Spain. |
| Abstrakt: |
Transparent conductors are essential in many optoelectronic devices, such as displays, smart windows, light-emitting diodes and solar cells. Here we demonstrate a transparent conductor with optical loss of ∼1.6%, that is, even lower than that of single-layer graphene (2.3%), and transmission higher than 98% over the visible wavelength range. This was possible by an optimized antireflection design consisting in applying Al-doped ZnO and TiO 2 layers with precise thicknesses to a highly conductive Ag ultrathin film. The proposed multilayer structure also possesses a low electrical resistance (5.75 Ω sq -1 ), a figure of merit four times larger than that of indium tin oxide, the most widely used transparent conductor today, and, contrary to it, is mechanically flexible and room temperature deposited. To assess the application potentials, transparent shielding of radiofrequency and microwave interference signals with ∼30 dB attenuation up to 18 GHz was achieved. |
